本发明属于材料制备及光催化技术领域,公开了一种多孔氮化碳/锡/氧化亚锡光催化材料及其制备方法,多孔氮化碳/锡/氧化亚锡光催化材料为type‑Ⅱ异质结光催化剂;PCN/Sn/SnO催化剂以零价锡作为电子桥梁的type‑Ⅱ异质结光催化剂,以多孔氮化碳作为基底,将多孔氮化碳与二水合氯化亚锡通过焙烧和光沉积制备而成。本发明为高比表面积和高活性位点的多孔氮化碳/锡/氧化亚锡材料,利用type‑Ⅱ异质结的电(56)对比文件Xueping Song et al..Porous graphiticcarbon nitride nanosheets preparedunderself-producing atmosphere for highlyimproved photocatalytic activity《.AppliedCatalysis B: Environmental》.2017,第217卷(第15期),第322-330页.Lang Shi et al..Construction of Sn/oxide g-C3N4 nanostructure byelectrostatic selfassembly strategy withenhanced photocatalytic degradationperformance《.Applied Surface Science》.2018,第457卷第1035-1043页.孙长红.h-BN的合成及g-C3N4/SnO复合材料的制备与结构性能表征《.中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑》.2019,(第9期),B020-229.Yefeng Chen et al..Sn-bridge type-ⅡPCN/Sn/SnO heterojunction with enhancedphotocatalytic activity《.SemiconductorScience and Technology》.2020,第35卷文献号115015.